An Improved Analytical Model for Crosstalk of SiC MOSFET in a Bridge-Arm Configuration

SiC MOSFETs have an excellent characteristic of high switching speed, which can improve the efficiency and power density converters significantly. However, fast processes cause serious crosstalk problems in bridge-arm configurations, restricts devices’ performances. This paper presents a detailed accurate improved analytical model, takes into account nonlinear capacitances, parasitic inductances, reverse recovery characteristics anti-parallel diodes, voltage damping oscillation process. The novelty proposed model lies fact that under condition comprehensively considering all these non-ideal factors bridge-arm, effects multi-parasitic elements multi-variables coupling to are hierarchically divided. their correlations described detail direct indirect variables’ impacts clearly traced. Thus, according different variables stages, influence be integrated complete equivalent process derived. simulation experiment platforms established series experimental verifications comparisons prove replicate measurements with good accuracy detail.